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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC2659 description collector-emitter sustaining voltage- : v ceo(sus) = 500v (min) high switching speed applications designed for high speed power switching applications. absolute maximum ratings(t a =25 ) symbol parameter max unit v cbo collector-base voltage 800 v v ceo collector-emitter voltage 500 v v ebo emitter-base voltage 8 v i c collector current-continuous 7 a i cm collector current-peak 15 a p c collector power dissipation @t c =25 120 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC2659 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.2a ; l= 25mh 500 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 1a b 1.0 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 1a b 1.5 v i cbo collector cutoff current v cb = 800v; i e = 0 0.1 ma i ebo emitter cutoff current v eb = 5v; i c = 0 0.1 ma h fe-1 dc current gain i c = 0.1a; v ce = 5v 15 h fe-2 dc current gain i c = 5a; v ce = 5v 8 switching times t on turn-on time 1 s t stg storage time 2.5 s t f fall time i c = 5a; i b1 = -i b2 = 1a 1 s isc website www.iscsemi.cn |
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